Semiconductor devices - Part 5-16: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy

IEC 60747-5-16:2023 specifies the measuring method of flat-band voltage of single GaN-based light emitting diode (LED) die or package without phosphor, based on the photocurrent (PC) spectroscopy. White LEDs for lighting applications are out of the scope of this part of IEC 60747.

General Information

Status
Published
Publication Date
27-Mar-2023
Current Stage
PPUB - Publication issued
Start Date
25-Apr-2023
Completion Date
28-Mar-2023
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IEC 60747-5-16:2023 - Semiconductor devices - Part 5-16: Optoelectronic devices - Light emitting diodes - Test method of the flat-band voltage of GaN-based light emitting diodes based on the photocurrent spectroscopy Released:3/28/2023
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IEC 60747-5-16
®

Edition 1.0 2023-03
INTERNATIONAL
STANDARD

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inside


Semiconductor devices –
Part 5-16: Optoelectronic devices – Light emitting diodes – Test method of the
flat-band voltage of GaN-based light emitting diodes based on the photocurrent
spectroscopy
IEC 60747-5-16:2023-03(en)

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IEC 60747-5-16

®


Edition 1.0 2023-03




INTERNATIONAL



STANDARD








colour

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Semiconductor devices –

Part 5-16: Optoelectronic devices – Light emitting diodes – Test method of the

flat-band voltage of GaN-based light emitting diodes based on the photocurrent

spectroscopy
























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ELECTROTECHNICAL


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– 2 – IEC 60747-5-16:2023 © IEC 2023
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms, definitions and abbreviated terms . 5
3.1 Terms and definitions . 5
3.2 Abbreviated terms . 6
4 Measuring methods . 6
4.1 Basic requirements . 6
4.1.1 Measuring conditions . 6
4.1.2 Measuring instruments and equipment . 7
4.2 Purpose . 7
4.3 Measurement . 7
4.3.1 Measurement setup . 7
4.3.2 Measurement principle. 8
4.3.3 Measurement sequence . 9
5 Test report . 11
Annex A (informative) Test example. 12
Annex B (informative) Comparison of PC and ER spectroscopies . 15
Bibliography . 17

Figure 1 – Schematic diagram of the PC spectroscopy setup . 7
Figure 2 – Schematic illustration of the InGaN/GaN quantum well and the PC signal
under different bias voltages . 8
Figure 3 – Schematic illustration of how the differential PC signal behaves as the bias
voltage is decreased . 9
Figure 4 – Schematic illustration of the peak slope as a function of bias voltage . 9
Figure 5 – Sequence of the measurement of the flat-band voltage using the PC
spectroscopy . 10
Figure A.1 – Spectral radiant flux of the Xe lamp . 12
Figure A.2 – PC signal vs. wavelength at different bias voltages . 13
Figure A.3 – Differential PC signal vs. wavelength at different bias voltages . 13
Figure A.4 – Peak slope as a function of reverse-bias voltage . 14
Figure B.1 – ER signal vs. wavelength at different bias voltages . 16
Figure B.2 – Determination of the flat-band voltage from the peak values of the ER
signals . 16

Table A.1 – Summary of test report . 14

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IEC 60747-5-16:2023 © IEC 2023 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SEMICONDUCTOR DEVICES –

Part 5-16: Optoelectronic devices – Light emitting diodes –
Test method of the flat-band voltage of GaN-based light emitting
diodes based on the photocurrent spectroscopy

FOREWORD
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rights. IEC shall not be held responsible for identifying any or all such patent rights.
IEC 60747-5-16 has been prepared by subcommittee 47E: Discrete semiconductor devices, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47E/788/CDV 47E/797/RVC

Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.

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– 4 – IEC 60747-5-16:2023 © IEC 2023
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 60747 series, published under the general title Semiconductor
devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
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IEC 60747-5-16:2023 © IEC 2023 – 5 –
SEMICONDUCTOR DEVICES –

Part 5-16: Optoelectronic devices – Light emitting diodes –
Test method of the flat-band voltage of GaN-based light emitting
diodes based on the photocurrent spectroscopy



1 Scope
This part of IEC 60747 specifies the measuring method of flat-band voltage of single GaN-
based light emitting diode (LED) die or package without phosphor, based on the photocurrent
(PC) spectroscopy. White LEDs for lighting applications are out of the scope of this part of
IEC 60747.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies.
For undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60747‑5‑6:2021, Semiconductor devices – Part 5-6: Optoelectronic devices – Light emitting
diodes
IEC 60747-5-15:2022, Semiconductor devices – Part 5-15: Optoelectronic devices – Light
emitting diodes – Test method of the flat-band voltage based on the electroreflectance
spectroscopy
3 Terms, definitions and abbreviated terms
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminology databases for use in standardization at the following
addresses:
• IEC Electropedia: available at https://www.electropedia.org/
• ISO Online browsing platform: available at https://www.iso.org/obp
3.1 Terms and definitions
3.1.1
spectral radiant flux
Φλ()

e,λ
radiant flux per unit wavelength interval at a given wavelength (λ)
Note 1 to entry: Spectral radiant flux is typically denoted by Φ , which is equivalent to dΦdλ, and is usually
λ
expressed in units of watts per nm.
1
[SOURCE: IEC 62607-3-1:2014 [1] , 3.20, modified – A symbol has been added.]

1
Numbers in square brackets refer to the Bibliography.

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– 6 – IEC 60747-5-16:2023 © IEC 2023
3.1.2
spectral photocurrent
I ()λ
ph,λ
photocurrent per unit wavelength interval at a given wavelength (λ)
Note 1 to entry: Spectral photocurrent is expressed in amperes per nm.
3.1.3
PC signal
spectral photocurrent divided by the spectral radiant flux of the radiation source, which is
I ()λΦ ()λ
expressed as a function of wavelength λ, i.e.,
ph,λ eλ,
3.1.4
differential PC signal
difference between the adjacent PC signals divided by the wavelength step
3.1.5
peak slope
absolute value of the extremum in the differential PC signal
3.1.6
quantum well
potential well which enables quantum confinement of particles in one dimension
[SOURCE: IEC 60050-511:2018 [2], 511-02-09, modified – The note to entry has been
removed.]
3.1.7
flat-band voltage
V
FB
voltage at which the
...

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