IEC 60747-16-8:2022

IEC 60747-16-8
®

Edition 1.0 2022-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE


Semiconductor devices –
Part 16-8: Microwave integrated circuits – Limiters

Dispositifs à semiconducteurs –
Partie 16-8: Circuits intégrés hyperfréquences – Limiteurs

IEC 60747-16-8:2022-11(en-fr)

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IEC 60747-16-8

®


Edition 1.0 2022-11




INTERNATIONAL



STANDARD




NORME


INTERNATIONALE











Semiconductor devices –

Part 16-8: Microwave integrated circuits – Limiters



Dispositifs à semiconducteurs –

Partie 16-8: Circuits intégrés hyperfréquences – Limiteurs
















INTERNATIONAL

ELECTROTECHNICAL

COMMISSION


COMMISSION

ELECTROTECHNIQUE


INTERNATIONALE




ICS 31.080.99 ISBN 978-2-8322-6117-0




Warning! Make sure that you obtained this publication from an authorized distributor.

Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agréé.

® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale

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– 2 – IEC 60747-16-8:2022  IEC 2022
CONTENTS
FOREWORD . 5
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
4 Essential ratings and characteristics . 9
4.1 General requirements . 9
4.1.1 Circuit identification and types . 9
4.1.2 General function description . 9
4.1.3 Manufacturing technology . 9
4.1.4 Package identification . 9
4.1.5 Main application . 9
4.2 Application description . 10
4.2.1 Conformance to system and/or interface information . 10
4.2.2 Overall block diagram . 10
4.2.3 Reference data . 10
4.2.4 Electrical compatibility . 10
4.2.5 Associated devices . 10
4.3 Specification of the function . 10
4.3.1 Detailed block diagram – Functional blocks . 10
4.3.2 Identification and function of terminals . 11
4.3.3 Function description . 11
4.4 Limiting values (absolute maximum rating system) . 12
4.4.1 Requirements . 12
4.4.2 Electrical limiting values . 12
4.4.3 Temperatures . 13
4.5 Operating conditions (within the specified operating temperature range) . 13
4.6 Electrical characteristics . 13
4.7 Mechanical and environmental ratings, characteristics and data . 14
4.8 Additional information . 14
5 Measuring methods . 15
5.1 General . 15
5.1.1 General precautions . 15
5.1.2 Characteristic impedance . 15
5.1.3 Handling precautions . 15
5.1.4 Types . 15
5.2 Insertion loss (L ) . 15
ins
5.2.1 Purpose . 15
5.2.2 Measuring methods . 15
5.3 Input return loss (L ) . 18
ret(in)
5.3.1 Purpose . 18
5.3.2 Measuring methods . 19
5.4 Output return loss (L ) . 21
ret(out)
5.4.1 Purpose . 21
5.4.2 Measuring methods . 21
5.5 Input power at 1dB compression (P ) and output power at 1dB
i(1dB)
compression (P ) . 24
o(1dB)

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IEC 60747-16-8:2022  IEC 2022 – 3 –
5.5.1 Purpose . 24
5.5.2 Circuit diagram . 24
5.5.3 Principle of measurement . 24
5.5.4 Circuit description and requirements . 24
5.5.5 Precautions to be observed . 24
5.5.6 Measurement procedure . 24
5.5.7 Specified conditions . 25
5.6 Intermodulation distortion (two-tone)(P /P ) . 25
n 1
5.6.1 Purpose . 25
5.6.2 Circuit diagram . 25
5.6.3 Principle of measurement . 26
5.6.4 Circuit description and requirements . 26
5.6.5 Precautions to be observed . 26
5.6.6 Measurement procedure . 27
5.6.7 Specified conditions . 27
5.7 Power at the intercept point (for intermodulation products) (P ) . 27
n(IP)
5.7.1 Purpose . 27
5.7.2 Circuit diagram . 27
5.7.3 Principle of measurement . 27
5.7.4 Circuit description and requirements . 27
5.7.5 Precautions to be observed . 27
5.7.6 Measurement procedure . 28
5.7.7 Specified conditions . 28
5.8 Leakage power for continuous wave (P ) . 28
leak(cw)
5.8.1 Purpose . 28
5.8.2 Circuit diagram . 28
5.8.3 Principle of measurement . 29
5.8.4 Circuit description and requirements . 29
5.8.5 Precautions to be observed . 29
5.8.6 Measurement procedure . 29
5.8.7 Specified conditions . 30
5.9 Spike leakage power for pulse wave(P ) and flat leakage power for
leak(spike)
pulse wave (P ). 30
leak(flat)
5.9.1 Purpose . 30
5.9.2 Circuit diagram . 30
5.9.3 Principle of measurement . 30
5.9.4 Circuit description and requirements . 30
5.9.5 Precautions to be observed . 30
5.9.6 Measurement procedure . 30
5.9.7 Specified conditions . 31
5.10 Response time(t ) . 31
res
5.10.1 Purpose . 31
5.10.2 Circuit diagram . 31
5.10.3 Principle of measurement . 31
5.10.4 Circuit description and requirements . 32
5.10.5 Precautions to be observed . 32
5.10.6 Measurement procedure . 32
5.10.7 Specified conditions . 33

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– 4 – IEC 60747-16-8:2022  IEC 2022
5.11 Recovery time(t ). 33
rec
5.11.1 Purpose . 33
5.11.2 Circuit diagram . 33
5.11.3 Principle of measurement . 33
5.11.4 Circuit description and requirements . 34
5.11.5 Precautions to be observed . 34
5.11.6 Measurement procedure . 34
5.11.7 Specified conditions . 35
Bibliography . 36

Figure 1 – Circuit diagram for the measurement of the insertion loss (method 1) . 16
Figure 2 – Circuit diagram for the measurement of the scattering parameters . 17
Figure 3 – Circuit diagram for the measurement of the input return loss (method 1) . 19
Figure 4 – Circuit diagram for the measurement of the output return loss (method 1) . 22
Figure 5 – Circuit diagram for the measurement of intermodulation distortion . 25
Figure 6 – Circuit diagram for the measurement of output leakage power . 29
Figure 7 – Circuit diagram for the measurement of response time . 31
Figure 8 – Spike leakage voltage and flat leakage voltage vs. time . 32
Figure 9 – Circuit diagram for the measurement of recovery time . 33
Figure 10 – Pulse envelope and continuous wave envelope vs. Time . 34


Table 1 – Function of terminals . 11
Table 2 – Electrical limiting values . 12
Table 3 – Electrical limiting values in detail specification . 13
Table 4 – Temperatures . 13
Table 5 – Electrical characteristics . 14

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IEC 60747-16-8:2022  IEC 2022 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SEMICONDUCTOR DEVICES –

Part 16-8: Microwave integrated circuits –
Limiters

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
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indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
rights. IEC shall not be held responsible for identifying any or all such patent rights.
IEC 60747-16-8 has been prepared by subcommittee 47E: Discrete semiconductor devices, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47E/793/FDIS 47E/799/RVD

Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.

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– 6 – IEC 60747-16-8:2022  IEC 2022
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 60747 series, published under the general title Semiconductor
devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.

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IEC 60747-16-8:2022  IEC 2022 – 7 –
SEMICONDUCTOR DEVICES –

Part 16-8: Microwave integrated circuits –
Limiters



1 Scope
This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and
measuring methods of microwave integrated circuit limiters.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies.
For undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-1:2006/AMD1:2010
IEC 60747-4, Semiconductor devices – Discrete devices – Part 4: Microwave diodes and
transistors
IEC 61340-5-1, Electrostatics – Part 5-1: Protection of electronic devices from electrostatic
phenomena – General requirements
IEC TR 61340-5-2, Electrostatics – Part 5-2: Protection of electronic devices from electrostatic
phenomena – User guide
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at https://www.electropedia.org/
• ISO Online browsing platform: available at https://www.iso.org/obp
3.1
insertion loss
L
ins
ratio of the input power to the output power, in the linear region of the power transfer curve
P (dBm) = f(P )
o i
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
Note 2 to entry: Usually the insertion loss is expressed in decibels.
[SOURCE: IEC 60747-16-4:2004/AMD 1:2009, 3.1, modified – “at the switched on port” has
been deleted]

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– 8 – IEC 60747-16-8:2022  IEC 2022
3.2
input return loss
L
ret(in)
ratio of the incident power at the input port to the reflected power at the input port
[SOURCE: IEC 60747-16-6:2019, 3.4]
3.3
output return loss
L
ret(out)
ratio of the incident power at the output port to the reflected power at the output port
[SOURCE: IEC 60747-16-6:2019, 3.5]
3.4
input power at 1dB compression
P
i(1dB)
input power where the insertion loss increases by 1 dB compared with insertion loss in linear
region
[SOURCE: IEC 60747-16-4:2004, 3.4]
3.5
output power at 1dB compression
P
o(1dB)
output power where the insertion loss increases by 1 dB compared with insertion loss in linear
region
[SOURCE: IEC 60747-16-4:2004, 3.5]
3.6
intermodulation distortion
P /P
n 1
ratio of the nth order component of the output power to the fundamental component of the output
power
Note 1 to entry: The abbreviation “IMD ” is in common use for the nth order intermodulation distortion.
n
[SOURCE: IEC 60747-4:2007/AMD1:2017, 7.2.19]
3.7
power at the intercept point
P
n(IP)
output power at intersection between the extrapolated output
th
powers of the fundamental component and the n order intermodulation components, when the
extrapolation is carried out in a diagram showing the output power of the components (in
decibels) as a function of the input power (in decibels)
[SOURCE: IEC 60747-16-1:2001, 3.8]
3.8
output leakage power
3.8.1
leakage power for continuous wave
P
leak(cw)
output power at limiter off state

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IEC 60747-16-8:2022  IEC 2022 – 9 –
3.8.2
spike leakage power for pulse wave
P
leak(spike)
instantaneous maximum output power at pulsed input power
3.8.3
flat leakage power for pulse wave
P
leak(flat)
output power in constant region after pulse wave input
3.9
response time
t
res
interval between the starting time of leakage and the staring time of the constant output voltage
region
3.10
recovery time
t
rec
time required for the insertion loss to recover within 3 dB after the large power input
4 Essential ratings and characteristics
4.1 General requirements
4.1.1 Circuit identification and types
The identification of type (device name), the category of circuit and technology applied shall be
given.
4.1.2 General function description
A general description of the function performed by the microwave integrated circuit limiters and
the features for the application shall be made.
4.1.3 Manufacturing technology
The manufacturing technology, e.g. semiconductor monolithic integrated circuit, thin film
integrated circuit, micro-assembly, etc. shall be stated. This statement shall include details of
the semiconductor technologies such as Schottky-barrier diode, PIN diode, transistor, etc.
IEC 60747-4 shall be referred to for terminology and letter symbols, essential ratings and
characteristics and measuring methods of such microwave devices.
4.1.4 Package identification
The following statements shall be made:
a) chip or packaged form;
b) IEC and/or national reference number of the outline drawing, or drawing of non-standard
package including te
...