Semiconductor devices - Part 16-7: Microwave integrated circuits - Attenuators

IEC 60747-16-7:2022 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit attenuators.

Dispositifs à semiconducteurs - Partie 16-7: Circuits intégrés hyperfréquences - Atténuateurs

L’IEC 60747-16-7:2022 spécifie la terminologie, les valeurs assignées et caractéristiques essentielles, et les méthodes de mesure des atténuateurs des circuits intégrés hyperfréquences.

General Information

Status
Published
Publication Date
28-Nov-2022
Current Stage
PPUB - Publication issued
Start Date
30-Dec-2022
Completion Date
29-Nov-2022
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IEC 60747-16-7:2022 - Semiconductor devices - Part 16-7: Microwave integrated circuits - Attenuators Released:11/29/2022
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IEC 60747-16-7
®

Edition 1.0 2022-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE


Semiconductor devices –
Part 16-7: Microwave integrated circuits – Attenuators

Dispositifs à semiconducteurs –
Partie 16-7: Circuits intégrés hyperfréquences – Atténuateurs

IEC 60747-16-7:2022-11(en-fr)

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IEC 60747-16-7

®


Edition 1.0 2022-11




INTERNATIONAL



STANDARD




NORME


INTERNATIONALE











Semiconductor devices –

Part 16-7: Microwave integrated circuits – Attenuators



Dispositifs à semiconducteurs –

Partie 16-7: Circuits intégrés hyperfréquences – Atténuateurs
















INTERNATIONAL

ELECTROTECHNICAL

COMMISSION


COMMISSION

ELECTROTECHNIQUE


INTERNATIONALE




ICS 31.080.99 ISBN 978-2-8322-6116-3




Warning! Make sure that you obtained this publication from an authorized distributor.

Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agréé.

® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale

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– 2 – IEC 60747-16-7:2022  IEC 2022
CONTENTS
FOREWORD . 5
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
4 Essential ratings and characteristics . 10
4.1 General requirements . 10
4.1.1 Circuit identification and types . 10
4.1.2 General function description . 11
4.1.3 Manufacturing technology . 11
4.1.4 Package identification . 11
4.2 Application description . 11
4.2.1 Conformance to system and/or interface information . 11
4.2.2 Overall block diagram . 11
4.2.3 Reference data . 11
4.2.4 Electrical compatibility . 11
4.2.5 Associated devices . 12
4.3 Specification of the function . 12
4.3.1 Detailed block diagram – Functional blocks . 12
4.3.2 Identification and function of terminals . 12
4.3.3 Function description . 13
4.4 Limiting values (absolute maximum rating system) . 13
4.4.1 Requirements . 13
4.4.2 Electrical limiting values . 13
4.4.3 Temperatures . 14
4.5 Operating conditions (within the specified operating temperature range) . 15
4.6 Electrical characteristics . 15
4.7 Mechanical and environmental ratings, characteristics and data . 15
4.8 Additional information . 16
5 Measuring methods . 16
5.1 General . 16
5.1.1 General precautions . 16
5.1.2 Characteristic impedance . 16
5.1.3 Handling precautions . 16
5.1.4 Types . 16
5.2 Transmission loss (L ) and insertion loss (L ) . 17
trans ins
5.2.1 Purpose . 17
5.2.2 Measuring methods . 17
5.3 Attenuation value (A ). 20
att
5.3.1 Purpose . 20
5.3.2 Measuring methods . 20
5.4 Attenuation range (A ) . 22
ran
5.4.1 Purpose . 22
5.4.2 Measuring methods . 22
5.5 Attenuation accuracy (A ), Attenuation accuracy (RMS) (A ) . 24
aur aur(RMS)
5.5.1 Purpose . 24
5.5.2 Measuring methods . 24

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IEC 60747-16-7:2022  IEC 2022 – 3 –
5.6 Input return loss (L ) . 26
ret(in)
5.6.1 Purpose . 26
5.6.2 Measuring methods . 26
5.7 Output return loss (L ) . 29
ret(out)
5.7.1 Purpose . 29
5.7.2 Measuring methods . 29
5.8 Input power at n dB compression (P ). 31
i(ndB)
5.8.1 Purpose . 31
5.8.2 Circuit diagram . 31
5.8.3 Principle of measurement . 31
5.8.4 Circuit description and requirements . 31
5.8.5 Precautions to be observed . 31
5.8.6 Measurement procedure . 31
5.8.7 Specified conditions . 31
5.9 Intermodulation distortion (two-tone)(P /P ) . 32
n 1
5.9.1 Purpose . 32
5.9.2 Circuit diagram . 32
5.9.3 Principle of measurement . 32
5.9.4 Circuit description and requirements . 33
5.9.5 Precautions to be observed . 33
5.9.6 Measurement procedure . 33
5.9.7 Specified conditions . 33
5.10 Power at the intercept point (for intermodulation products) (P ) . 34
n(IP)
5.10.1 Purpose . 34
5.10.2 Circuit diagram . 34
5.10.3 Principle of measurement . 34
5.10.4 Circuit description and requirements . 34
5.10.5 Precautions to be observed . 34
5.10.6 Measurement procedure . 34
5.10.7 Specified conditions . 34
5.11 Relative phase shift (θ ) . 35
rel
5.11.1 Purpose . 35
5.11.2 Circuit diagram . 35
5.11.3 Principle of measurement . 35
5.11.4 Circuit description and requirements . 35
5.11.5 Precautions to be observed . 35
5.11.6 Measurement procedure . 36
5.11.7 Specified conditions . 36
5.12 Turn on time(t ), turn off time(t ), rise time(t ), fall time(t ) . 36
on off r(out) f(out)
5.12.1 Purpose . 36
5.12.2 Circuit diagram . 36
5.12.3 Principle of measurement . 36
5.12.4 Circuit description and requirements . 38
5.12.5 Precautions to be observed . 38
5.12.6 Measurement procedure . 38
5.12.7 Specified conditions . 38
5.13 Control voltage sensitivity (S ) . 38
vcont

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– 4 – IEC 60747-16-7:2022  IEC 2022
5.13.1 Purpose . 38
5.13.2 Measuring methods . 38
Bibliography . 41

Figure 1 – Circuit diagram for the measurement of the transmission loss and insertion
loss (method 1) . 17
Figure 2 – Circuit diagram for the measurement of the scattering parameters . 19
Figure 3 – Circuit diagram for the measurement of the return loss (method 1) . 27
Figure 4 – Circuit diagram for the measurement of intermodulation distortion . 32
Figure 5 – Circuit diagram for the measurement of response times and switching times . 36
Figure 6 – Input and output waveforms . 37

Table 1 – Function of terminals . 12
Table 2 – Electrical limiting values . 14
Table 3 – Electrical limiting values in detail specification . 14
Table 4 – Temperatures . 14
Table 5 – Electrical characteristics . 15

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IEC 60747-16-7:2022  IEC 2022 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________

SEMICONDUCTOR DEVICES –

Part 16-7: Microwave integrated circuits –
Attenuators

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
rights. IEC shall not be held responsible for identifying any or all such patent rights.
IEC 60747-16-7 has been prepared by subcommittee 47E: Discrete semiconductor devices, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47E/794/FDIS 47E/798/RVD

Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.

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– 6 – IEC 60747-16-7:2022  IEC 2022
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 60747 series, published under the general title Semiconductor
devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.

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IEC 60747-16-7:2022  IEC 2022 – 7 –
SEMICONDUCTOR DEVICES –

Part 16-7: Microwave integrated circuits –
Attenuators



1 Scope
This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and
measuring methods of microwave integrated circuit attenuators.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies.
For undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-1:2006/AMD 1:2010
IEC 60747-4, Semiconductor devices – Discrete devices – Part 4: Microwave diodes and
transistors
IEC 61340-5-1, Electrostatics – Part 5-1: Protection of electronic devices from electrostatic
phenomena – General requirements
IEC TR 61340-5-2, Electrostatics – Part 5-2: Protection of electronic devices from electrostatic
phenomena – User guide
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at https://www.electropedia.org/
• ISO Online browsing platform: available at https://www.iso.org/obp
3.1
reference state
thru state
state of minimum attenuation
3.2
attenuation state
state in which the attenuation is greater than that in the reference state

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– 8 – IEC 60747-16-7:2022  IEC 2022
3.3
transmission loss
L
trans
ratio of the input power to the output power, in the linear region of the power transfer curve
P (dBm) = f(P )
o i
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
Note 2 to entry: Usually the transmission loss is expressed in decibels.
3.4
insertion loss

L
ins
ratio of the input power to the output power, in the linear region of the power transfer curve
P (dBm) = f(P ) in the reference state
o i
Note 1 to entry: In this region, ∆ P (dBm) =∆ P (dBm).
o i
Note 2 to entry: Usually the insertion loss is expressed in decibels.
[SOURCE: IEC 60747-16-4:2004/AMD 1:2009, 3.1, modified – “at the switched on port” has
been deleted and “in the reference state” has been added.]
3.5
attenuation value
A
att
difference between the insertion loss and the transmission loss in the attenuation state
3.6
attenuation range
A
ran
difference between the maximum and minimum attenuation value
3.7
attenuation accuracy
A
aur
maximum difference between the measured and the nominal attenuation values
3.8
attenuation accuracy (RMS)
A
aur (RMS)
root-mean-square value of the attenuation accuracy
3.9
input return loss
L
ret(in)
ratio of the incident power at the input port to the reflected power at the input port
[SOURCE: IEC 60747-16-6:2019, 3.4]
3.10
output return loss
L
ret(out)
ratio of the incident power at the output port to the reflected power at the output port
[SOURCE: IEC 60747-16-6:2019, 3.5]

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IEC 60747-16-7:2022  IEC 2022 – 9 –
3.11
input power at n dB compression
P
i(ndB)
input power where the transmission loss increases by n dB compared with transmission loss in
linear region
Note 1 to entry: Usually n is 0,25 for voltage variable attenuators and 0,1 for digital step attenuators.
3.12
intermodulation distortion
P /P
n 1
ratio of the nth order component of the output power to the fundamental component of the output
power
Note 1 to entry: The abbreviation “IMD ” is in common use for the nth order intermodulation distortion.
n
[SOURCE: IEC 60747-4:2007/AMD1:2017, 7.2.19]
3.13
power at the intercept point (for intermodulation products)
P
n(IP)
output power at intersection between the extrapolated output powers of the fundamental
th
component and the n order intermodulation components, when the extrapolation is carried out
in a diagram showing the output power of the components (in decibels) as a function of the
input power (in decibels)
[SOURCE: IEC 60747-16-1:2001, 3.8]
3.14
relative phase shift
θ
rel
phase shift in the attenuation state relative to that in the reference state
3.15
switching time
3.15.1
turn on time
t
on
interval between the reference point on the leading edge of the control voltage and the reference
point on the trailing edge of the envelope of the output voltage in the linear region of the power
transfer curve P (dBm) = f(P ) when the state of attenuator changes from the reference state to
o i
the attenuation state
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
Note 2 to entry: Usually the reference point is 50 % of the amplitude.
[SOURCE: IEC 60747-16-4:2004, 3.6, modified – Note 2 has been added, “the lower reference
point“ has been replaced by “the reference point”, “the upper reference point on the leading
edge” has been replaced by “the reference point on the trailing edge” and “when the state of
attenuator changes from the reference state to the attenuation state” has been added]

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– 10 – IEC 60747-16-7:2022  IEC 2022
3.15.2
turn off time
t
off
interval between the reference point on the trailing edge of the control voltage and the reference
point on the leading edge of the envelope of the output voltage in the linear region of the power
transfer curve P (dBm) = f(P ) when the state of attenuator changes from the attenuation state
o i
to the reference state
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
Note 2 to entry: Usually the reference is 50% of the amplitude.
[SOURCE: IEC 60747-16-4:2004, 3.7, modified – Note 2 has been added, “the upper reference
point“ has been replaced by “the reference point”, “the lower reference point on the trailing
edge” has been replaced by “the reference point on the leading edge” and “when the state of
attenua
...

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